Preparation of Single- and Few-Layer Graphene Sheets Using Co Deposition on SiC Substrate

<table class="table-group" width="800px"><tr class="fig-image" id="a"><td><img alt="319624.fig.007a" src="https://static-preview.hindawi.com/articles/jnm/volume-2011/319624/figures/319624.fig.007a.jpg"/></td></tr><tr class="fig-caption"><td align="center"><table><tr><td><b>(a) </b>Co/SiC sample annealed at 1000°C</td></tr></table></td></tr><tr class="fig-image" id="b"><td><img alt="319624.fig.007b" src="https://static-preview.hindawi.com/articles/jnm/volume-2011/319624/figures/319624.fig.007b.jpg"/></td></tr><tr class="fig-caption"><td align="center"><table><tr><td><b>(b) </b>Transferred graphene sheets on SiC substrate</td></tr></table></td></tr></table>

<table>Current-voltage characteristics of the samples: (a) Co/SiC contact annealed at 1000°C for 1 min and (b) transferred graphene sheet on SiC substrate.</table>

Journal of Nanomaterials

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Figure 7

Figure 7: Preparation of Single- and Few-Layer Graphene Sheets Using Co Deposition on SiC Substrate 