On the Origin of Light Emission in Silicon Rich Oxide Obtained by Low-Pressure Chemical Vapor Deposition

Figure 4

AFM images of SRO30 (a) as-deposited and (b) after annealing (Ro30 A) at 1,100°C for 180 minutes, and (c) comparison of profiles along the lines in the images.

(a)

(b)

(c)