SILAR-Based Application of Various Nanopillars on GaN-Based LED to Enhance Light-Extraction Efficiency

Figure 2

Schematic diagram of the pattern transfer procedure of nanostructure LED: (a) conventional LED (LED-II); (b) deposited 300 nm SiO₂ on the surface by PECVD; (c) deposition of ZnO nanoparticles on the surface by SILAR; (d) ICP etching; (e) LED with SiO₂ nanopillars (LED-III); (f) LED with SiO₂, ITO, and GaN nanopillars (LED-IV); (g) LED with ITO and GaN nanostructure (LED-V).

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