Research of Dielectric Breakdown Microfluidic Sampling Chip

Table 1

Coupling parameters of ICP.

ICP P/W	700
RF RP/W	Passivation: 10
	Etching: 25
Gas flow/sccm	Passivation: C4F8 = 100
	Etching: SF6 = 100
Time/s	Passivation: 10
	Etching: 10
Cycle number	30
Helium pressure/Torr	10
Total gas pressure/mTorr	40
Substrate temperature/°C	10