Growth Mechanism and Surface Structure of Ge Nanocrystals Prepared by Thermal Annealing of Cosputtered GeSiO Ternary Precursor
Figure 4
The Gaussian fit of Raman spectra for the sample annealed at 685°C for 6 min. Fit curves and correspond to the crystalline component while and correspond to the amorphous component. During the fit procedure, the peak positions are limited to specific ranges, while other parameters are unbounded.
