Growth Mechanism and Surface Structure of Ge Nanocrystals Prepared by Thermal Annealing of Cosputtered GeSiO Ternary Precursor

<table>The crystallinity volume fraction (<svg height="12.175" id="M26" style="vertical-align:-3.2316pt" version="1.1" viewbox="0 0 15.9875 12.175" width="15.9875" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,7.675)"><path d="M516 277q0 -126 -140 -231q-36 -27 -75.5 -42.5t-63.5 -15.5q-38 0 -73 43q-10 -44 -18 -106q-18 -134 -32 -151q-12 -16 -40 -25t-46 -10l-5 14q22 38 84 406q16 92 44.5 146.5t88.5 95.5q68 47 136 47q63 0 101.5 -47.5t38.5 -123.5zM432 259q0 61 -27 101t-79 40
t-82 -49t-49 -148l-24 -127q42 -36 88 -36q79 0 126 61.5t47 157.5z" id="x1D70C"></path></g>
<g transform="matrix(.012,-0,0,-.012,10.475,11.762)"><path d="M383 397q0 -32 -35 -49q-12 -6 -23 8q-37 45 -84 45t-90 -71q-40 -65 -40 -167q0 -57 22 -86t59 -29q38 0 81.5 24.5t69.5 51.5l16 -21q-44 -53 -104 -84t-109 -31q-56 0 -89.5 41t-33.5 117q0 61 30 124t79 105q33 28 81 50.5t86 22.5q34 0 59 -15.5t25 -35.5z" id="x1D450"></path></g>
</svg>) of Ge component in the superlattices as a function of annealing duration.</table>

Journal of Nanomaterials

fig5

Figure 5

Figure 5: Growth Mechanism and Surface Structure of Ge Nanocrystals Prepared by Thermal Annealing of Cosputtered GeSiO Ternary Precursor 