Research Article
Growth Mechanism and Surface Structure of Ge Nanocrystals Prepared by Thermal Annealing of Cosputtered GeSiO Ternary Precursor
Figure 7
XPS spectra of Ge-ncs:SiO2 annealed at 670°C for 25 min. The small hump indicated by dashed ellipse is related to the Ge suboxide species ().
