Molecular Dynamics Simulation of the Crystal Orientation and Temperature Influences in the Hardness on Monocrystalline Silicon

Table 1

Parameters used in Tersoff potential for silicon.

Parameter	Silicon-silicon
𝐴 (eV)	1830.8
𝐵 (eV)	471.18
𝜆 (Å^−1)	2.4799
𝜇 (Å^−1)	1.7322
𝛽	1.1000×10^−6
𝑛	0.78734
𝑐	1.0039×10^5
𝑑	1.6217×10
ℎ	−0.59825
𝑅 (Å)	2.7
𝑆 (Å)	3.0