Horizontal Assembly of Single Nanowire Diode Fabricated by p-n Junction GaN NW Grown by MOCVD

Figure 3

HR-TEM image of the n-GaN:Si NWs grown on pulsed u-GaN seed: (a) single n-GaN:Si NW, (b) lattice structure of n-GaN:Si NWs, (c) SAED pattern of the n-GaN NW:Si, (d) the lattice image obtained by inverse fast fourier transform (IFFT), and (e) fast fourier transform image (FFT).