Improved Light Output Power of Chemically Transferred InGaN/GaN Light-Emitting Diodes for Flexible Optoelectronic Applications

Figure 4

(a) Light emission of F-LEDs by changing current injection from 10 mA to 100 mA, (b) V-I characteristics, (c) L-I characteristics, and (d) dominant wavelength variation as a function of current injection.

(a)

(b)

(c)

(d)