The Achievement of a Zinc Oxide-Based Homojunction Diode Using Radio Frequency Magnetron Cosputtering System

<div>Specific contact resistance of the 400°C-annealed ITO-ZnO/<i>n</i>-ZnO contact system as a function of the annealing time under vacuum ambient (the inset figure shows the<i> I-V</i> curves of the contact system annealed for 5 min).</div>

Journal of Nanomaterials

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Figure 5

Figure 5: The Achievement of a Zinc Oxide-Based Homojunction Diode Using Radio Frequency Magnetron Cosputtering System 