Research Article
Gallium Nitride Electrical Characteristics Extraction and Uniformity Sorting
Table 1
Comparison of datasheet and measured characteristics.
| | Parameter | Symbol | Test conditions | E-mode
GaN FET Value | D-mode GaN FET
Value | Unit |
| |
On-state resistance | RDS(ON) | VGS = 5 V,
VDS = 0.18 V, = 6 A | ~25 m (max.)/30 m | — |
Ω | VGS = 0 V,
VDS = 1 V,
= 3.87 A | — | —/0.26 |
| |
Gate threshold voltage | VTH | VGS = VDS,
= 3 mA | 0.99 | — |
V | VGS = 7 V,
= min. A | — | −3.9 |
| | Input capacitance | CISS | VGS = 0 V,
VDS = 100 V,
osc. level = 30 mV
(E-mode)
VGS = −5 V,
VDS = 50 V,
osc. level = 30 mV
(D-mode) | 540 (max.)/473.7
— | —
—/72.7 | pF |
| | Output capacitance | COSS | VGS = 0 V,
VDS = 100 V,
osc. level = 30 mV
(E-mode)
VGS = −5 V,
VDS = 50 V,
osc. level = 30 mV
(D-mode) | 350 (max.)/301
— | —
—/64.4 | pF |
| | Reverse transfer capacitance | CRSS | VGS = 0 V,
VDS = 100 V,
osc. level = 30 mV
(E-mode)
VGS = −5 V,
VDS = 50 V,
osc. level = 30 mV
(D-mode) | 12 (max.)/16.7
— | —
—/10.2 | pF |
| | Before slash: datasheet; after slash: measured |
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