Responsivity Dependent Anodization Current Density of Nanoporous Silicon Based MSM Photodetector

Table 1

Etching current density dependent Schottky barrier height, ideality factor, and saturation current of Pt/NPSi system.

Anodization current density (mA/cm^2)	(eV)		Saturation current (A)
20	0.67	4.6	1.2 × 10^−7
25	0.68	5.1	1.9 × 10^−7
35	0.69	4.1	2.5 × 10^−7