Research Article
Surface Functionality Features of Porous Silicon Prepared and Treated in Different Conditions
Table 2
IR absorption peaks in the por-Si samples interpreted according to [
29,
37–
39].
| Number | Band position, cm−1 | Interpretation |
| 1 | 2958 | Antisymmetric stretching vibrations of CH− in CH3 | 2 | 2927 | Antisymmetric stretching vibrations of CH− in CH2 | 3 | 2856 | Antisymmetric stretching vibrations of CH− in CH | 4 | 2250 | SiH− in O3–SiH | 5 | 2190 | SiH− in SiO2–SiH | 6 | 2106 | SiH− in Si2H–SiH | 7-8 |
1056–1160 | Antisymmetric stretching vibrations of SiO− in O–SiO and C–SiO | 9 | 827 | Symmetric stretching vibrations of SiO in O–Si–O | 10 | 948 | SiH− in Si2–H–SiH | 11 | 760 | Si–C | 12 | 664 | SiH− deformation vibrations |
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It corresponds to the relating numbers of absorption bands in Figures 4 and 5.
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