Stoichiometry Calculation in BaxSr1−xTiO3 Solid Solution Thin Films, Prepared by RF Cosputtering, Using X-Ray Diffraction Peak Positions and Boltzmann Sigmoidal Modelling

<div>Boltzmann fitting to the peak position of the (110) plane of the prepared films as function of applied power.</div>

Journal of Nanomaterials

fig3

Figure 3

Figure 3: Stoichiometry Calculation in BaxSr1−xTiO3 Solid Solution Thin Films, Prepared by RF Cosputtering, Using X-Ray Diffraction Peak Positions and Boltzmann Sigmoidal Modelling

Figure 3 | Stoichiometry Calculation in BaxSr1−xTiO3 Solid Solution Thin Films, Prepared by RF Cosputtering, Using X-Ray Diffraction Peak Positions and Boltzmann Sigmoidal Modelling 