Deviation from Regular Shape in the Early Stages of Formation of Strain-Driven 3D InGaAs/GaAs Micro/Nanotubes

Figure 1

Schematic representation of the μtube fabrication process: (a) as-grown epitaxial structure; (b) the InGaAs/GaAs bilayer is free to bend as a result of the selective etching of the underlying AlAs sacrificial layer; and (c) μtube formation.

(a)

(b)

(c)