A Fabrication Process for Emerging Nanoelectronic Devices Based on Oxide Tunnel Junctions

Figure 3

Measured characteristic of a 40 nm and a 100 nm wide Ti/TiO₂/TiN/Ti tunnel junction as a function of device thickness (numbers given on the different curves) for + 10 s, + 20 s, and + 45 s. The device thickness has been extracted with four-point probe resistance measurement on close-by nanowires.