A Fabrication Process for Emerging Nanoelectronic Devices Based on Oxide Tunnel Junctions

<div><svg height="8.8423pt" id="M41" style="vertical-align:-0.2064009pt" version="1.1" viewbox="-0.0498162 -8.6359 19.5814 8.8423" width="19.5814pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M405 650H141L135 622C222 616 230 610 215 535L133 116C118 41 113 33 29 28L23 0H289L295 28C209 33 205 40 219 116L298 535C312 609 317 616 399 622L405 650Z" id="g113-74"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="428" vert-adv-y="428"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,5.567,0)"><path d="M300 253H71L57 198H286L300 253Z" id="g190-46"></path><glyph.data ascent="989" descent="-360" horiz-adv-x="356" vert-adv-y="356"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,10.212,0)"><path d="M697 650H468L461 623L492 619C539 613 547 605 518 546C481 471 367 264 278 116H276C239 278 197 500 186 567C180 604 185 613 226 619L252 623L260 650H24L17 623C78 617 92 613 108 533L216 -11H247C365 200 515 462 560 529C616 612 624 615 689 623L697 650Z" id="g113-87"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="709" vert-adv-y="709"></glyph.data></g></svg> switching electrical characteristic of a 180 × 40 nm<sup>2</sup> Ti/HfO<sub>2</sub>/TiN/Ti fabricated planar RRAM device with a 12 nm <svg height="12.599pt" id="M42" style="vertical-align:-3.2911pt" version="1.1" viewbox="-0.0498162 -9.3079 29.1915 12.599" width="29.1915pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M729 650H468V622C546 615 554 610 554 527V365H213V527C213 610 221 616 297 622V650H38V622C120 616 128 611 128 527V123C128 39 120 34 40 28V0H303V28C221 34 213 40 213 123V322H554V123C554 39 546 34 460 28V0H728V28C647 34 639 39 639 123V527C639 610 647 615 729 622V650Z" id="g190-73"></path><glyph.data ascent="989" descent="-360" horiz-adv-x="766" vert-adv-y="766"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,9.749,0)"><path d="M54 437L27 408L31 397H101V103C101 37 94 32 30 26V0H266V25C187 33 180 36 180 110V397H288C299 404 304 428 298 437H180V477C179 562 190 610 203 630C214 647 230 659 256 659C289 659 318 641 337 622C346 612 355 612 364 619C374 627 380 635 383 643C388 655 387 667 378 678C362 697 333 710 299 712C260 707 225 689 189 659C135 613 119 563 112 541S101 490 101 458V437H54Z" id="g190-103"></path><glyph.data ascent="989" descent="-360" horiz-adv-x="296" vert-adv-y="296"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,13.597,0)"><path d="M381 665C170 665 44 498 44 318C44 125 188 -15 369 -15C552 -15 703 117 703 333C703 534 550 665 381 665ZM359 629C491 629 601 517 601 306C601 114 502 21 390 21C249 21 146 158 146 346S248 629 359 629Z" id="g190-80"></path><glyph.data ascent="989" descent="-360" horiz-adv-x="747" vert-adv-y="747"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,23.396,3.132)"><path d="M545 403C545 425 527 451 498 451C448 451 400 404 312 286L290 341C262 412 246 451 219 451C182 451 138 404 92 345L112 323C152 368 169 378 181 378C192 378 201 359 216 321L257 214C184 115 142 69 113 69C102 69 93 73 88 79S78 89 68 89C47 89 24 61 24 40C24 8 49 -12 75 -12C125 -12 175 31 271 175L312 64C330 15 357 -12 382 -12C421 -12 475 35 515 98L496 121C466 88 439 62 420 62C402 62 384 92 363 147L325 247C349 280 374 309 397 333C422 361 446 381 462 381C471 381 481 374 488 366C493 360 499 357 505 357C521 357 545 380 545 403Z" id="g50-121"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="569" vert-adv-y="569"></glyph.data></g></svg> switching junction. The schematic represents the planar device, while the smaller on the right plot gives the <svg height="12.584pt" id="M43" style="vertical-align:-3.29567pt" version="1.1" viewbox="-0.0498162 -9.28833 53.1577 12.584" width="53.1577pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M610 18C585 26 567 34 540 68C517 97 499 128 476 171C452 215 425 276 413 304C496 332 570 394 570 494C570 555 545 595 509 619S419 650 364 650H139L133 622C216 615 219 612 203 527L129 132C112 40 105 36 23 28L17 0H279L285 28C199 34 194 40 211 132L239 284H284C320 284 334 275 351 236C374 182 394 140 420 93C459 23 495 -1 592 -8H600L610 18ZM480 485C480 424 449 372 403 342C374 323 338 316 293 316H245L291 562C296 589 301 601 311 608S337 618 358 618C432 618 480 575 480 485Z" id="g113-83"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="627" vert-adv-y="627"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,8.086,3.132)"><path d="M387 665C175 665 46 498 46 318C46 123 194 -15 374 -15C558 -15 712 114 712 333C712 535 557 665 387 665ZM364 625C495 625 607 518 607 306C607 115 505 25 396 25C256 25 151 161 151 346C151 532 255 625 364 625Z" id="g58-77"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="757" vert-adv-y="757"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,14.911,3.132)"><path d="M731 650H485V618C556 614 580 601 585 558C588 530 592 485 592 390V153H589L173 650H22V618C69 614 92 606 112 582C131 558 132 555 132 483V266C132 175 129 128 125 96C120 49 95 36 36 33V0H281V33C212 36 188 50 183 98C180 129 177 175 177 266V510H179L603 -9H638V390C638 483 640 530 644 561C649 602 674 615 731 618V650Z" id="g58-76"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="754" vert-adv-y="754"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,22.322,0)"><path d="M368 703H309L44 -163H104L368 703Z" id="g113-48"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="412" vert-adv-y="412"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,27.683,0)"><path d="M610 18C585 26 567 34 540 68C517 97 499 128 476 171C452 215 425 276 413 304C496 332 570 394 570 494C570 555 545 595 509 619S419 650 364 650H139L133 622C216 615 219 612 203 527L129 132C112 40 105 36 23 28L17 0H279L285 28C199 34 194 40 211 132L239 284H284C320 284 334 275 351 236C374 182 394 140 420 93C459 23 495 -1 592 -8H600L610 18ZM480 485C480 424 449 372 403 342C374 323 338 316 293 316H245L291 562C296 589 301 601 311 608S337 618 358 618C432 618 480 575 480 485Z" id="g113-83"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="627" vert-adv-y="627"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,35.769,3.132)"><path d="M387 665C175 665 46 498 46 318C46 123 194 -15 374 -15C558 -15 712 114 712 333C712 535 557 665 387 665ZM364 625C495 625 607 518 607 306C607 115 505 25 396 25C256 25 151 161 151 346C151 532 255 625 364 625Z" id="g58-77"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="757" vert-adv-y="757"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,42.594,3.132)"><path d="M502 500C497 551 492 613 491 650H43V617C122 612 130 606 130 521V129C130 45 122 38 41 33V0H319V33C227 38 217 45 217 129V305H319C411 305 413 295 427 225H461V421H427C414 357 411 348 319 348H217V580C217 609 219 612 250 612H330C401 612 423 605 439 578C452 557 458 539 467 496L502 500Z" id="g58-68"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="540" vert-adv-y="540"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,47.508,3.132)"><path d="M502 500C497 551 492 613 491 650H43V617C122 612 130 606 130 521V129C130 45 122 38 41 33V0H319V33C227 38 217 45 217 129V305H319C411 305 413 295 427 225H461V421H427C414 357 411 348 319 348H217V580C217 609 219 612 250 612H330C401 612 423 605 439 578C452 557 458 539 467 496L502 500Z" id="g58-68"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="540" vert-adv-y="540"></glyph.data></g></svg> ratio.</div>

Journal of Nanomaterials

fig6

Figure 6

Figure 6: A Fabrication Process for Emerging Nanoelectronic Devices Based on Oxide Tunnel Junctions 