A Fabrication Process for Emerging Nanoelectronic Devices Based on Oxide Tunnel Junctions

<div>EFTEM cross section of a Ti/<svg height="12.599pt" id="M49" style="vertical-align:-3.2911pt" version="1.1" viewbox="-0.0498162 -9.3079 29.1915 12.599" width="29.1915pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M729 650H468V622C546 615 554 610 554 527V365H213V527C213 610 221 616 297 622V650H38V622C120 616 128 611 128 527V123C128 39 120 34 40 28V0H303V28C221 34 213 40 213 123V322H554V123C554 39 546 34 460 28V0H728V28C647 34 639 39 639 123V527C639 610 647 615 729 622V650Z" id="g190-73"></path><glyph.data ascent="989" descent="-360" horiz-adv-x="766" vert-adv-y="766"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,9.749,0)"><path d="M54 437L27 408L31 397H101V103C101 37 94 32 30 26V0H266V25C187 33 180 36 180 110V397H288C299 404 304 428 298 437H180V477C179 562 190 610 203 630C214 647 230 659 256 659C289 659 318 641 337 622C346 612 355 612 364 619C374 627 380 635 383 643C388 655 387 667 378 678C362 697 333 710 299 712C260 707 225 689 189 659C135 613 119 563 112 541S101 490 101 458V437H54Z" id="g190-103"></path><glyph.data ascent="989" descent="-360" horiz-adv-x="296" vert-adv-y="296"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,13.597,0)"><path d="M381 665C170 665 44 498 44 318C44 125 188 -15 369 -15C552 -15 703 117 703 333C703 534 550 665 381 665ZM359 629C491 629 601 517 601 306C601 114 502 21 390 21C249 21 146 158 146 346S248 629 359 629Z" id="g190-80"></path><glyph.data ascent="989" descent="-360" horiz-adv-x="747" vert-adv-y="747"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,23.396,3.132)"><path d="M545 403C545 425 527 451 498 451C448 451 400 404 312 286L290 341C262 412 246 451 219 451C182 451 138 404 92 345L112 323C152 368 169 378 181 378C192 378 201 359 216 321L257 214C184 115 142 69 113 69C102 69 93 73 88 79S78 89 68 89C47 89 24 61 24 40C24 8 49 -12 75 -12C125 -12 175 31 271 175L312 64C330 15 357 -12 382 -12C421 -12 475 35 515 98L496 121C466 88 439 62 420 62C402 62 384 92 363 147L325 247C349 280 374 309 397 333C422 361 446 381 462 381C471 381 481 374 488 366C493 360 499 357 505 357C521 357 545 380 545 403Z" id="g50-121"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="569" vert-adv-y="569"></glyph.data></g></svg>/TiN junction after CMP. Interfaces are clearly defined and <svg height="12.599pt" id="M50" style="vertical-align:-3.2911pt" version="1.1" viewbox="-0.0498162 -9.3079 29.1915 12.599" width="29.1915pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M729 650H468V622C546 615 554 610 554 527V365H213V527C213 610 221 616 297 622V650H38V622C120 616 128 611 128 527V123C128 39 120 34 40 28V0H303V28C221 34 213 40 213 123V322H554V123C554 39 546 34 460 28V0H728V28C647 34 639 39 639 123V527C639 610 647 615 729 622V650Z" id="g190-73"></path><glyph.data ascent="989" descent="-360" horiz-adv-x="766" vert-adv-y="766"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,9.749,0)"><path d="M54 437L27 408L31 397H101V103C101 37 94 32 30 26V0H266V25C187 33 180 36 180 110V397H288C299 404 304 428 298 437H180V477C179 562 190 610 203 630C214 647 230 659 256 659C289 659 318 641 337 622C346 612 355 612 364 619C374 627 380 635 383 643C388 655 387 667 378 678C362 697 333 710 299 712C260 707 225 689 189 659C135 613 119 563 112 541S101 490 101 458V437H54Z" id="g190-103"></path><glyph.data ascent="989" descent="-360" horiz-adv-x="296" vert-adv-y="296"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,13.597,0)"><path d="M381 665C170 665 44 498 44 318C44 125 188 -15 369 -15C552 -15 703 117 703 333C703 534 550 665 381 665ZM359 629C491 629 601 517 601 306C601 114 502 21 390 21C249 21 146 158 146 346S248 629 359 629Z" id="g190-80"></path><glyph.data ascent="989" descent="-360" horiz-adv-x="747" vert-adv-y="747"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,23.396,3.132)"><path d="M545 403C545 425 527 451 498 451C448 451 400 404 312 286L290 341C262 412 246 451 219 451C182 451 138 404 92 345L112 323C152 368 169 378 181 378C192 378 201 359 216 321L257 214C184 115 142 69 113 69C102 69 93 73 88 79S78 89 68 89C47 89 24 61 24 40C24 8 49 -12 75 -12C125 -12 175 31 271 175L312 64C330 15 357 -12 382 -12C421 -12 475 35 515 98L496 121C466 88 439 62 420 62C402 62 384 92 363 147L325 247C349 280 374 309 397 333C422 361 446 381 462 381C471 381 481 374 488 366C493 360 499 357 505 357C521 357 545 380 545 403Z" id="g50-121"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="569" vert-adv-y="569"></glyph.data></g></svg> and TiN depositions are conformal on the Ti left electrode.</div>

Journal of Nanomaterials

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Figure 7

Figure 7: A Fabrication Process for Emerging Nanoelectronic Devices Based on Oxide Tunnel Junctions 