Incorporation of Ge on High <i>K</i> Dielectric Material for Different Fabrication Technologies (HBT, CMOS) and Their Impact on Electrical Characteristics of the Device

<div>Leakage current densities vs. EOT for SN1–4 and reference HfO<sub>2</sub>/Si [<a href="/journals/jnm/2018/2497352/#B5">5</a>].</div>

Journal of Nanomaterials

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Figure 9

Figure 9: Incorporation of Ge on High <i>K</i> Dielectric Material for Different Fabrication Technologies (HBT, CMOS) and Their Impact on Electrical Characteristics of the Device 

Figure 9 | Incorporation of Ge on High K Dielectric Material for Different Fabrication Technologies (HBT, CMOS) and Their Impact on Electrical Characteristics of the Device 