Realization of N-Type Semiconducting of Phosphorene through Surface Metal Doping and Work Function Study

Figure 1

(a, b) Top view and side view of Cu binding on phosphorene; the distance of metal to phosphorene monolayer (Dis-L) is defined as the separation of metal to the upper P atomic layer; (c) the first Brillouin zone and high summary points; (d) electron band structure of phosphorene doped with Cu; (e) density of state of phosphorene doped with Cu and projection on Cu. In (d) and (e), the blue-colour dash lines indicate the Fermi level.

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