Research Article

Valence Band Mixing in GaAs/AlGaAs Quantum Wells Adjacent to Self-Assembled InAlAs Antidots

Table 2

Material parameters used in the calculation.

Luttinger parametersDielectric constantDeformation potential coefficientsPoisson’s ratioPiezoelectric constant
aabc (eV)c (eV)de (C/m2)

GaAs6.982.0612.4-1.7-4.50.31-0.16

aRef. [24], bRef. [34], cRef. [25], dRef. [35], and eRef. [36].