Structural Evolution and Photoluminescence of SiO₂ Layers with Sn Nanoclusters Formed by Ion Implantation

Table 1

Comparison of the interplanar distances () of β-Sn and SnO₂ and the calculated ones from the electron diffraction pattern.

No. of diffraction rings	Calculated interplanar distances from electron diffraction data, Å	Interplanar distances and Miller indices, Å (hkl) [23]
		β-Sn	SnO2
1	3.318	—	3.349 (110)
2	2.632	2.608 (210)	2.643 (101)
3	2.306	—	2.308 (111)
4	2.086	2.062 (220)	2.118 (210)
5	1.755	1.730 (221)	1.764 (211)
6	1.673	1.659 (301)	1.675 (220)
7	1.577	1.590 (002)	1.579 (300)
8	1.488	1.484 (112)	1.482 (221)
9	1.410	—	1.415 (301)