Molecular Dynamics Simulations of the Thermal Conductivity of Silicon-Germanium and Silicon-Germanium-Tin Alloys

Table 1

Interatomic simulation parameters of Si-Si, Ge-Ge, and Si-Ge.

—	(10^-26 kg)		(10^-10 m)	(10^-10 m)
Si-Si	4.66	1.41992	2.105	5.431	7.05	0.6022	29.53	1.20	1.8
Ge-Ge	12.05	1.30665	2.221	5.658	7.05	0.6022	24.63	1.20	1.8
Si-Ge	—	1.45930	2.141	—	7.05	0.6022	31.08	1.34	1.84