Characteristics of a Multiple-Layered Graphene Oxide Memory Thin Film Transistor with Gold Nanoparticle Embedded as Charging Elements

Figure 4

(a) Breakdown voltage test of the rGO-capacitor. The voltage range was from -7.51 V to 7.62 V. (b) Retention measurement of the rGO-capacitor from 10 s to 100,000 s shows almost unconverted performances.

(a)

(b)