Forming-Free Pt/Ti/AlO_x/CeO_x/Pt Multilayer Memristors with Multistate and Synaptic Characteristics

Figure 2

The ln(|V|)–ln(|I|) characteristic curves for the Pt/Ti/AlO_x/CeO_x/Pt device under (a) positive bias voltage and (b) negative bias voltage. (c) The speculative conduction and resistance switching mechanisms of the device.

(a)

(b)

(c)