Research Article
Forming-Free Pt/Ti/AlOx/CeOx/Pt Multilayer Memristors with Multistate and Synaptic Characteristics
Figure 3
(a) I-V curves of the Pt/Ti/AlOx/CeOx/Pt multilayer memristor measured by DC double sweeping. Different RESET stop voltages (−0.5 V, −0.6 V, −0.7 V, −0.8 V, −0.9 V, and −1 V) were used to achieve five-level resistive switching. (b) Cycles test of the Pt/Ti/AlOx/CeOx/Pt multilayer device in different RESET stop voltages. (c) Time retention characteristics of different resistance states.
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