Research Article
Forming-Free Pt/Ti/AlOx/CeOx/Pt Multilayer Memristors with Multistate and Synaptic Characteristics
Figure 4
(a) Resistance evolution of the Pt/Ti/AlOx/CeOx/Pt multilayer device for a pulse cycle, where pulse width was 50 ms. (b) Resistance evolution of the Pt/Ti/AlOx/CeOx/Pt multilayer device over 500 pulse cycles.
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