Forming-Free Pt/Ti/AlO_x/CeO_x/Pt Multilayer Memristors with Multistate and Synaptic Characteristics

Figure 5

(a) Device resistance modulation by applying 100 voltage pulses. (−0.6 V) with different pulse widths (5 ms, 50 ms, and 250 ms). (b) Device resistance modulation by applying 100 voltage pulses (50 ms) with various amplitudes (−0.6 V, −0.7 V, −0.8 V, and−0.9 V). (c) Device resistance modulation by applying 100 voltage pulses (0.45 V) with different pulse widths (5 ms, 50 ms, and 250 ms). (d) Device resistance modulation by applying 100 voltage pulses (50 ms) with various amplitudes (0.4 V, 0.45 V, and 0.5 V).

(a)

(b)

(c)

(d)