Growth of InAs(Bi)/GaAs Quantum Dots under a Bismuth Surfactant at High and Low Temperature

Figure 6

Room temperature photoluminescence spectra from the layers using different excitation laser powers. All spectra are normalized to the highest intensity recorded for H2. Broad luminescence (LEF) which can be seen from 0.7 to 0.9 eV is attributed to the formation of large InAs QD clusters and chains [41]. Only weak QD emission around 1.14 eV can be identified from layer L0. 90 mW data for the low growth temperature layers is omitted due to a low signal to noise ratio.