Growth of InAs(Bi)/GaAs Quantum Dots under a Bismuth Surfactant at High and Low Temperature

Table 1

Summary of growth parameters used for QD layers and ensemble properties from AFM and PL measurements. AFM statistics are split into “short” and “tall’ values based on the bimodal distributions observed in Figure 2. Values for H1 indicate QDs of low and high aspect ratio, respectively, which are discussed in Figure 3.

Layer	QD growth; temperature (°C)	Bi BEP; (×10^-7 mbar)	QD density (fit, ×10^8 cm^-2); (short/tall)	Mean QD height (fit, nm); (short/tall)	PL peak (eV); (900 mW)	PL FWHM (eV); (900 mW)
L0	380	0	2.4/0	1.656/0	1.139	0.094
L1		1.2 (low)	13.4/110.2	1.367/3.329	0.992	0.051
L2		2 (med)	21.6/61.4	1.186/6.407	0.968	0.035
L3		2.7 (high)	90.0/42.4	2.009/9.712	0.968	0.033
H0	510	0	0/114.3	0/6.171	1.019	0.076
H1		1.2 (low)	31.6/81.1	7.698/8.739	0.987	0.043
H2		2 (med)	0/52.8	0/10	1.000	0.045
H3		2.7 (high)	0/57.6	0/12.98	0.998	0.053