Research Article
Low-Voltage Low Noise Figure Down-Conversion Mixer for Band #1 of MB-OFDM System in 180 nm Complementary Metal Oxide Semiconductor Technology
Table 1
Performance summary and comparison with the other works.
| | Ref. | Technology (CMOS process) | DC voltage (V) | RF frequency (GHz) | Conversion gain (dB) | IIP3 (dBm) | P1dB (dBm) | NF (dB) | S11 (dB) |
| | [18] | 0.18 μm | 1.8 | 0.01-0.3 | 2.82-8.2 | (-3.86)–(-2.06) | — | 34.64-11.35 (SSB) | — | | [24] | 0.18 μm | 1.8 | 3.5-10 | 5 | -2.52 | — | 21 (SSB) | — | | [21] | 0.18 μm | 1.8 | 5.2/5.1 | 13.07 | -2.84 | -14.44 | 30.33 | — | | [21] | 0.18 μm | 1.8 | 2.4/2.3 | 16.1 | -3.14 | -14.93 | 27.26 | — | | This work | 0.18 μm | 1.2 | 3.432 | 9.76 | -4.7 | -16.25 | 9.036 SSB | -19.49 |
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