Improvement of the Parameter Distribution of TiN/HfO₂/CeO_x/TiN Memristors by Rapid Thermal Annealing

Figure 2

curves of unannealed TiN/HfO₂//TiN devices (a) and annealed TiN/HfO₂//TiN devices (b) with voltage sweeping from and and cumulative probabilities of the and (c) and and (d) of TiN/HfO₂//TiN, after the forming process (the insets show the forming process).

(a)

(b)

(c)

(d)