Improvement of the Parameter Distribution of TiN/HfO₂/CeO_x/TiN Memristors by Rapid Thermal Annealing

Figure 5

XPS spectra showing the Hf 4f peaks (a) (the inset shows the C 1s peak at 284.8 eV for calibration) and Ce 3d peaks (b) of TiN/HfO₂//TiN (unannealed). XPS spectra showing the O 1s peaks for the HfO₂ films of TiN/HfO₂//TiN under different annealing conditions (c). Change in the oxygen vacancy concentration of the HfO₂ films after annealing at 400°C for different times (d) and after annealing at different temperatures for 2 min (e).

(a)

(b)

(c)

(d)

(e)