Improvement of the Parameter Distribution of TiN/HfO<sub>2</sub>/CeO<i><sub>x</sub></i>/TiN Memristors by Rapid Thermal Annealing

<div>Log-log <svg height="8.8423pt" id="M115" style="vertical-align:-0.2064009pt" version="1.1" viewbox="-0.0498162 -8.6359 19.5814 8.8423" width="19.5814pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M405 650H141L135 622C222 616 230 610 215 535L133 116C118 41 113 33 29 28L23 0H289L295 28C209 33 205 40 219 116L298 535C312 609 317 616 399 622L405 650Z"></path></g><g transform="matrix(.013,0,0,-0.013,5.567,0)"><path d="M300 253H71L57 198H286L300 253Z"></path></g><g transform="matrix(.013,0,0,-0.013,10.212,0)"><path d="M697 650H468L461 623L492 619C539 613 547 605 518 546C481 471 367 264 278 116H276C239 278 197 500 186 567C180 604 185 613 226 619L252 623L260 650H24L17 623C78 617 92 613 108 533L216 -11H247C365 200 515 462 560 529C616 612 624 615 689 623L697 650Z"></path></g></svg> curves and their fit for determining the conduction mechanism of the unannealed TiN/HfO<sub>2</sub>/<svg height="12.0444pt" id="M116" style="vertical-align:-3.29106pt" version="1.1" viewbox="-0.0498162 -8.75334 29.9613 12.0444" width="29.9613pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M614 175C564 76 510 21 408 21C256 21 146 149 146 336C146 488 235 629 402 629C510 629 570 586 597 480L626 488C620 541 614 582 606 638C578 643 510 665 429 665C206 665 44 527 44 316C44 157 153 -15 402 -15C474 -15 558 5 586 11C604 45 629 119 643 165L614 175Z"></path></g><g transform="matrix(.013,0,0,-0.013,8.841,0)"><path d="M380 106C343 72 306 56 265 56C195 56 116 112 115 248C235 252 361 262 377 265C396 269 400 277 400 297C400 374 333 449 250 449H249C198 449 144 421 103 376S37 269 37 201C37 88 109 -12 232 -12C263 -12 332 6 395 84L380 106ZM225 412C281 412 315 364 314 312C314 297 308 292 290 292C232 290 176 289 120 289C135 370 180 412 225 412Z"></path></g><g transform="matrix(.013,0,0,-0.013,14.419,0)"><path d="M381 665C170 665 44 498 44 318C44 125 188 -15 369 -15C552 -15 703 117 703 333C703 534 550 665 381 665ZM359 629C491 629 601 517 601 306C601 114 502 21 390 21C249 21 146 158 146 346S248 629 359 629Z"></path></g><g transform="matrix(.0091,0,0,-0.0091,24.166,3.132)"><path d="M545 403C545 425 527 451 498 451C448 451 400 404 312 286L290 341C262 412 246 451 219 451C182 451 138 404 92 345L112 323C152 368 169 378 181 378C192 378 201 359 216 321L257 214C184 115 142 69 113 69C102 69 93 73 88 79S78 89 68 89C47 89 24 61 24 40C24 8 49 -12 75 -12C125 -12 175 31 271 175L312 64C330 15 357 -12 382 -12C421 -12 475 35 515 98L496 121C466 88 439 62 420 62C402 62 384 92 363 147L325 247C349 280 374 309 397 333C422 361 446 381 462 381C471 381 481 374 488 366C493 360 499 357 505 357C521 357 545 380 545 403Z"></path></g></svg>/TiN devices (a) and TiN/HfO<sub>2</sub>/CeO<sub>x</sub>/TiN devices annealed at 400°C for 2 min (b).</div>

Journal of Nanomaterials

fig6

Figure 6

Figure 6: Improvement of the Parameter Distribution of TiN/HfO<sub>2</sub>/CeO<i><sub>x</sub></i>/TiN Memristors by Rapid Thermal Annealing 

Journal of Nanomaterials

Improvement of the Parameter Distribution of TiN/HfO2/CeOx/TiN Memristors by Rapid Thermal Annealing

Figure 6

Improvement of the Parameter Distribution of TiN/HfO₂/CeO_x/TiN Memristors by Rapid Thermal Annealing