Improvement of the Parameter Distribution of TiN/HfO₂/CeO_x/TiN Memristors by Rapid Thermal Annealing

Table 1

Mean values, standard deviation, and CV (in the brackets) of the , , , and of TiN/HfO₂//TiN devices before and after annealing at 400°C for 2 min.

	(V) [CV]	(V) [CV]	(Ω) [CV]	(Ω) [CV]
TiN/HfO2//TiN (unannealed)	[15.68%]	[4.56%]	[36.95%]	[47.56%]
TiN/HfO2//TiN; (400°C-2 min)	[10.18%]	[1.85%]	[10.99%]	[22.48%]

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