Research Article

Electrostatic Potential Distribution Analysis of Silicon Nanowire Field Effect Transistor with Various Channel Length

Figure 3

(a) Electrostatic potential distribution for the channel length of 1000 nm, gate voltage of , and drain to source voltage of . (b) Representation of 1-D electrostatic potential along the 1000 nm silicon nanowire axis with to 10 V and .
(a)
(b)