Comparative Performance Study of Difference Differential Amplifier Using 7 nm and 14 nm FinFET Technologies and Carbon Nanotube FET

Table 1

The Stanford CNFET model parameters.

Parameter	Description	Value
	Power supply	0.7 V
	Physical channel length	16 nm
	CNT pitch	10 nm
	CNT chirality	(19, 0)
	Mean free path in intrinsic CNT	200 nm
	N-type CNFET flat band voltage	0
	Dielectric material of top gate	HfO2 (16)
	Source-side length of doped CNT	16 nm
	Drain-side length of doped CNT	16 nm
	Oxide thickness	4 nm
	Dielectric constant	SiO2 (4)
	Mean free path in doped CNT	15 nm
	Fermi level of n+-doped drain/source CNT region	0.6 eV
	Total number of CNT used per CNFET	∼