Comparative Performance Study of Difference Differential Amplifier Using 7 nm and 14 nm FinFET Technologies and Carbon Nanotube FET

Table 13

Comparison of the performance between current and previous researches.

Parameters	Matthus et al. [27]	Khateb et al. [28]	Khateb and Kulej [29]	Anand Kumar et al. [30]	This research
Technology	0.18 μm bipolar, CMOS	0.18 μm CMOS TSMC	0.18 μm CMOS TSMC	14 nm FinFET PTM model	16 nm CNTFET
DC supply	1.8 V	0.5 V	0.3 V	0.8 V	0.6 V
Gain	46 dB	61.4 dB	60 dB	74.62 dB	116.03 dB
Bandwidth	2 MHz	6.98 kHz	1.85 kHz	20 MHz	23.4 MHz
Power consumption	—	246.6 nW	22 nW	3.44 nW	1.42 nW
CMRR	—	100 dB	—	89.8 dB	131.78 dB
PSRR	—	127.8 dB	57 dB	7.02 dB	2.53 dB
Slew rate	—	500 V/μs	1.55 V/μs	127 V/fs	10.8 V/fs