Review and Evaluation of Power Devices and Semiconductor Materials Based on Si, SiC, and Ga-N

Table 1

Comparative performance for the Si, SiC, and Ga-N materials.

Parameters	SiC	Si	Ga-N
Electron mobility	650 cm^2/V	1200 cm^2/V	2000 cm^2/V
Thermal conductivity	5 W/cmK	1.5 W/cmK	1.3 W/cmK
Breakdown field	3.5 mV/cm	0.3 mV/cm	3.3 mV/cm