Research Article
Si:HgTe Colloidal Quantum Dots Heterojunction-Based Infrared Photodiode
Figure 7
(a) Photoresponse of HgTe-CQDs/silicon photodetectors under incident light of 405, 520, 638, 980, and 1,550 nm (30 mW/cm2) at a bias of 1 V; (b) photoresponsivity curves of the HgTe-CQDs/silicon photodiodes at 1,550 nm; (c) I–V curves of HgTe-CQDs/silicon heterojunction devices in the dark and under light illumination at 980 nm; (d) at 980 nm, rising and falling edges are used to estimate the rise time (Tr) and fall time (Tf); (e) photoresponse of HgTe-CQDs/silicon heterojunction under different bias voltages at 980 nm; (f) photoresponse of the HgTe-CQDs/silicon heterojunction under different light intensities at 980 nm.
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