Si:HgTe Colloidal Quantum Dots Heterojunction-Based Infrared Photodiode

Table 2

Si:CQDs PD performance is compared to CQDs-based PD in terms of device performance.

Devices	Operating temperature (K)	Responsivity (A/W)	Detectivity (Jones)	Time response (ms)	Reference
Si/HgTe-based photodiode	300	4 × 10^−2	4.4 × 10^10	0.36	This work
HgTe CQDs-based photoconductor	300	3.5 × 10^−3	6.6 × 10^7	–	[27]
Si/Graphene/HgTe-based photodiode	300	0.9	5 × 10^9	–	[28]
HgTe CQDs-based phototransistor	260–300	0.56	2 × 10^10	0.012	[37]
Si/PbSe-based phototransistor	300	648.7	7.48 × 10^10	0.0732	[38]