Fabrication of UV Photodetectors Based on Photoelectrochemically Etched Nanoporous Silicon: Effect of Etchants Ratio

<div>XRD patterns of n-type crystalline Si (111) wafer and the grown PSi layers at different chemical ratios (HF:C<sub>2</sub>H<sub>6</sub>O:H<sub>2</sub>O<sub>2</sub>).</div>

Journal of Nanomaterials

fig5

Figure 5

Figure 5: Fabrication of UV Photodetectors Based on Photoelectrochemically Etched Nanoporous Silicon: Effect of Etchants Ratio 