Fabrication of UV Photodetectors Based on Photoelectrochemically Etched Nanoporous Silicon: Effect of Etchants Ratio

Figure 8

I–V properties of the Pt/n-PSi/Pt photodetector in dark and under UV illumination for different (HF:C₂H₆O:H₂O₂) ratios: (a) (1 : 1 : 0), (b) (1 : 3 : 0), and (c) (2 : 1 : 1).

(a)

(b)

(c)