Fabrication of UV Photodetectors Based on Photoelectrochemically Etched Nanoporous Silicon: Effect of Etchants Ratio

Figure 9

Bias voltage-dependent photoresponse (under UV light illumination) of the photodetector fabricated from n-PSi grown at different chemical ratios (HF:C₂H₆O:H₂O₂): (a) (1 : 1 : 0), (b) (1 : 3 : 0), and (c) (2 : 1 : 1).

(a)

(b)

(c)