Theoretical Study of Carbon Clusters in Silicon Carbide Nanowires

Figure 4

Relative formation energies (ΔΩ) of C–C and C–C_Si defects in (a) 3C–SiC bulk, (b) C-coated [100] SiC NW, (c) Si-coated SiC NW, and (d) [111] SiC NW. The vertical dashed lines indicate the stoichiometric condition.

(a)

(b)

(c)

(d)