Stability Improvement of an Efficient Graphene Nanoribbon Field-Effect Transistor-Based SRAM Design

Table 3

Device parameters of fin field-effect transistors.

Device parameters	Values (nm)
Gate length, Lg	16
Top-fin width, Wtop	8
Bottom-fin width, Wbottom	8
Fin height, Hf	32
Effective oxide thickness, EOT	1