Review Article
Graphene and g-C3N4-Based Gas Sensors
Table 2
Parameters for the production of Gr by the PECVD technique.
| | Carbon source/flow rate (sccm) | Gas carrier/flow rate (sccm) | Substrate | Substrate/annealed temperature (°C) | Time (s) | Power (KW) | RF power (MHz) | Ref. |
| | C2H2/15 | Ar/5 | Si, Si/SiO2, Ni, Cu, MgO, NaCl, glass | Ambient to 400/800 | — | — | — | [42] | | CH4/8 | Ar/30 and H2/10 | Cu | 670–850 | 10–90 | 0.050 | — | [43] | | CH4/25 | H2/200 | Cu | 900 | 600 | 1 | — | [44] | | CH4/5 | H2/20 | SiO2 | 900 | 3600 | 0.300 | 13.56 | [45] | | C2H4/20 | H2/40 | Si/Al | 450/(450 to 620) | 900 | 0.030 | 13.56 | [46] | | CH4/6 | Ar/5 | SiO2, quartz | 650 | 900 | - | 13.56 | [47] |
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