Graphene and g-C₃N₄-Based Gas Sensors

Table 6

The deposition conditions of carbon nitride by PECVD technique.

Carbon source/flow rate	Nitrogen source/flow rate	Carrier gases/flow rate	Substrate temperature (°C)	Deposition time	Power (W)	RF power (MHz)	Ref.
C2H4/0.5 L/min	N2/3 L/min	H2/4 sccm	400	6 h	840	—	[68]
C6H6/—	N2/10 sccm	H2/5 sccm	RT to 200	—	60	13.56	[69]