Qualitative Simulation of the Growth of Electrolessly Deposited Cu Thin Films

Table 1

Void-free trench filling with constant reaction rate 𝐹.

𝑘	Aspect ratio	𝐹	Plating time
	𝑘 : 1		𝑡
1	1 : 1	3.0	110
2	2 : 1	0.5	600
3	3 : 1	0.3	900
4	4 : 1	0.1	3000